A recombination model for transient and stationary stress-induced leakage current

Charge-separation experiments performed at a variable time after stress and on n(+)- and p(+)-polysilicon p-MOS devices show that recombination in oxi de defects is the mechanism leading to low-voltage stress-induced leakage c urrent (SILC). Accordingly, a new model for the SILC is developed, which co nsiders both trap-assisted tunneling and electron-hole recombination in oxi de defects. Simulation results are in good agreement with transient and ste ady-state data for both electron and hole SILC in different MOS devices. Ac cording to this model, recombination is mainly responsible for low-voltage leakage current, which represents a severe limitation for flash EEPROM scal ing. (C) 2000 Elsevier Science Ltd. All rights reserved.