Reliability of ultra-thin N2O-nitrided oxides grown by RTP under low pressure and in different gas atmospheres

Authors
Beichele, M Bauer, AJ Ryssel, H
Citation
M. Beichele et al., Reliability of ultra-thin N2O-nitrided oxides grown by RTP under low pressure and in different gas atmospheres, MICROEL REL, 40(4-5), 2000, pp. 723-726
Citations number
7
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONICS RELIABILITY
ISSN journal
00262714 → ACNP
Volume
40
Issue
4-5
Year of publication
2000
Pages
723 - 726
Database
ISI
SICI code
0026-2714(200004/05)40:4-5<723:ROUNOG>2.0.ZU;2-O
Abstract
Oxide reliability of oxynitrides with thicknesses between 3.6 and 2.6 nm wa s investigated. The oxynitrides were grown at reduced pressure in gas atmos pheres containing different ratios of N2O and O-2 concentrations. The conce ntrations of the nitrogen incorporated into the oxide were found to be depe ndent on both, oxidation pressure and oxidation ambience. Further, reliabil ity tests revealed that the nitrogen concentration, which is beneficial to oxide reliability, shows a strong dependence on oxide thickness. (C) 2000 E lsevier Science Ltd. All rights reserved.