Operation of n-channel MOSFET was studied at low temperatures. It has been
shown that the charge state of shallow traps in the Si/SiO2 interface is re
sponsible for the hysteresis of transistor drain characteristics in the pre
kink region. Thermally activated emptying of these traps leads to the sharp
decrease of the current in the subthreshold mode of transistor operation.
(C) 2000 Elsevier Science Ltd. All rights reserved.