Effect of oxide-semiconductor interface traps on low-temperature operationof MOSFETs

Authors
Lysenko, VS Tyagulski, IP Gomeniuk, YV Osiyuk, IN
Citation
Vs. Lysenko et al., Effect of oxide-semiconductor interface traps on low-temperature operationof MOSFETs, MICROEL REL, 40(4-5), 2000, pp. 735-738
Citations number
7
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONICS RELIABILITY
ISSN journal
00262714 → ACNP
Volume
40
Issue
4-5
Year of publication
2000
Pages
735 - 738
Database
ISI
SICI code
0026-2714(200004/05)40:4-5<735:EOOITO>2.0.ZU;2-O
Abstract
Operation of n-channel MOSFET was studied at low temperatures. It has been shown that the charge state of shallow traps in the Si/SiO2 interface is re sponsible for the hysteresis of transistor drain characteristics in the pre kink region. Thermally activated emptying of these traps leads to the sharp decrease of the current in the subthreshold mode of transistor operation. (C) 2000 Elsevier Science Ltd. All rights reserved.