The positive charge neutralisation after bi-directional stress on MOS capacitors

Citation
D. Ziane et A. Ei-hdiy, The positive charge neutralisation after bi-directional stress on MOS capacitors, MICROEL REL, 40(4-5), 2000, pp. 759-761
Citations number
13
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONICS RELIABILITY
ISSN journal
00262714 → ACNP
Volume
40
Issue
4-5
Year of publication
2000
Pages
759 - 761
Database
ISI
SICI code
0026-2714(200004/05)40:4-5<759:TPCNAB>2.0.ZU;2-E
Abstract
The aim of this work is to study the positive charge relaxation after bidir ectional electron injections in a p-metaloxide-silicon capacitor submitted to a constant current. This relaxation is studied following two steps. When the stressed sample is submitted to a nonstressing constant current, the p ositive charge neutralisation follows an exponential law with time. This al lows us to estimate the electron capture cross-section (approximate to 10(- 16) to approximate to 2 x 10(-15) cm(2)). When the sample is let without an y applied field, the positive charge relaxation follows a logarithmic law w ith time. It is also shown that the capture cross-section depends on the st ress and relaxation times. (C) 2000 Elsevier Science Ltd. All rights reserv ed.