The image force effect on the barrier height in MOS structures: correlation of the corrected barrier height with temperature and the oxide thickness

The Fowler-Nordheim (FN) current in Si-poly (n(+))-SiO2-Si(p) structures wa s measured and computed numerically using the complete integral equation ta king into account the temperature, the flat-band voltage changes, the effec tive masses and the field dependence of the barrier shape with the image fo rce. The fit of the experimental data allows an accurate determination of t he electron affinity difference (Phi) and the barrier height (Phi(B)) at th e emitting Si-poly(n(+)) gate electrode-oxide interface. The correlation be tween the temperature changes of these two parameters and the oxide thickne ss is discussed. (C) 2000 Elsevier Science Ltd. All rights reserved.