Vs. Lysenko et al., Effect of traps in the transition Si/SiO2 layer on input characteristics of SOI transistors, MICROEL REL, 40(4-5), 2000, pp. 799-802
In this article, investigations of low-temperature operation of n-channel a
ccumulation mode SOI MOSFET are reported. It has been shown that the charge
state of shallow traps situated in the thin transition layer between the g
ate oxide and silicon overlayer affects the transistor characteristics at t
emperatures below 20 K, giving rise to peaks in transconductance. (C) 2000
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