Study of the positive charge buildup into buried oxide of SIMOX SOI structure during bias-temperature stress

The buildup of fixed and mobile charge in the buried oxide (BOX) of silicon implanted by oxygen (SIMOX) silicon-on-insulator (SOI) structures during b ias-temperature (BT) cycling has been studied by the thermally stimulated p olarization (TSP) current technique and C-V measurements. Two polarization processes have been observed: the first process with activation energy of 0 .3 eV is likely related to the positively charged ion transport across the BOX, the second process with activation energy about 1.2 eV is associated w ith space charge polarization. It was found that the ion transport is creat ed simultaneously with the process of lateral positive charge buildup near the BOX/substrate interface when the bias is applied to the structure at te mperatures above 280 degrees C. (C) 2000 Elsevier Science Ltd. All rights r eserved.