Oxidation of Si1-x-yGexCy strained layers grown on Si: kinetics and inter-face properties

We have investigated the thermal oxidation of strained Si1-xGex and Si1-x-y GexCy layers and the influence of the thermal process on the structure of t he layers. Using XPS and SIMS depth profiles, we have found a germanium pil e-up in the epitaxial layer near the oxide-layer interface. Using transmiss ion electron microscopy (TEM), we have observed that crystallinity is well conserved, but additionally, we have found SiC precipitates. A qualitative model for the oxidation of this kind of binary and ternary alloys is presen ted. The model is based on the strain development of the samples and depend s on germanium and carbon compositions and on the temperature of the proces s. (C) 2000 Elsevier Science Ltd. All rights reserved.