Synthesis of luminescent particles in SiO2 films by sequential Si and C ion implantation

Citation
O. Gonzalez-varona et al., Synthesis of luminescent particles in SiO2 films by sequential Si and C ion implantation, MICROEL REL, 40(4-5), 2000, pp. 885-888
Citations number
13
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONICS RELIABILITY
ISSN journal
00262714 → ACNP
Volume
40
Issue
4-5
Year of publication
2000
Pages
885 - 888
Database
ISI
SICI code
0026-2714(200004/05)40:4-5<885:SOLPIS>2.0.ZU;2-C
Abstract
Thermal oxides co-implanted with Si+ and C+ and submitted to thermal anneal ing treatments present an intense white photoluminescence emission at room temperature, visible to the naked eye. Emission spectra show three intense and simultaneous emission bands centered at 1.45 eV (infrared), 2.1 eV (yel low) and 2.8 eV (blue), The origin of these bands can be explained in terms of the simultaneous formation of different kinds of nanoprecipitates of th e Si, SiC and C. Besides, the intensity of these bands was found to depend strongly on the annealing time, which is linked to the kinetics of these pr ecipitates. (C) 2000 Published by Elsevier Science Ltd. All rights reserved .