Thin film oxides as probe for homogeneity measurements of 3-dimensional objects treated by plasma immersion ion implantation

Citation
W. Ensinger et K. Volz, Thin film oxides as probe for homogeneity measurements of 3-dimensional objects treated by plasma immersion ion implantation, NUCL INST B, 166, 2000, pp. 154-158
Citations number
11
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
ISSN journal
0168583X → ACNP
Volume
166
Year of publication
2000
Pages
154 - 158
Database
ISI
SICI code
0168-583X(200005)166:<154:TFOAPF>2.0.ZU;2-#
Abstract
Results on an optical method are presented for investigation of the lateral homogeneity of treatment of 3-dimensional objects by plasma immersion ion implantation (PIII). It is based on interference colours of thin oxide film s of transition metals such as titanium, niobium or tantalum. The thickness of the oxides and hence their colour changes when they are sputter etched by the plasma immersion ion bombardment. With the example of cube-shaped sa mples which are treated by argon PIII, it is demonstrated how this method w orks. Cube-shaped samples with slots with both inner and outer surfaces are a particularly interesting and illustrative example both for homogencity e ffects of PIII and its measurement. It turns out that large differences in ion irradiation intensity between the outer parts and the inner parts of su ch samples develop. For the outer sides, a gradient in irradiation intensit y is found. In contrast, the inner walls are hardly changed. However, by fa r most the inner bottom side of the samples is affected; it is considerably sputter etched. These unexpected results are explained by the shape of the cathode sheath from which the ions are accelerated and by the resulting io n trajectories. (C) 2000 Elsevier Science B.V. All rights reserved.