Diffusion of oxygen from substrate to the film was observed under the influ
ence of large electronic excitation. CuO thin film similar to 210 nm on flo
at glass was irradiated with 210 MeV I ions. We noticed the transport of ox
ygen from the substrate to the CuO him through the interface. The amount of
oxygen transport From glass to the film was found to be fluence dependent.
The loss of oxygen from the films was also observed. The erosion of Cu ato
ms was also observed beyond a fluence of 9.6 x 10(13) ions/cm(2). The measu
rements were performed by on-line elastic recoil detection using a large ar
ea position sensitive detector. Since the electronic energy loss dominates
in the present case of 210 MeV I ions, the observed changes at the interfac
e and surface are attributed to inelastic collisions of the incident ions w
ith the atomic electrons in the sample. (C) 2000 Elsevier Science B.V. All
rights reserved.