Defect annealing kinetics in irradiated 6H-SiC

Isochronal and isothermal annealing of ion-irradiation damage on the Si sub lattice in 6H SiC has been investigated experimentally by in situ Rutherfor d backscattering spectrometry in channeling geometry (RBS/C). At low ion fl uences corresponding to dilute concentrations of irradiation-induced defect s, complete recovery of disorder on the Si sublattice can occur below room temperature. The implantation of helium impedes the defect recovery process es at low temperatures. Below room temperature, the thermal recovery of def ects on the Si sublattice has an activation energy on the order of 0.25 +/- 0.1 eV. Recovery of disorder on the Si sublattice above 570 K has an activ ation energy on the order of 1.5 +/- 0.3 eV. (C) 2000 Elsevier Science B.V. All rights reserved.