Generation of a 7.4 mT ESR doublet induced by gamma rays in amorphous-SiO2

Citation
S. Agnello et al., Generation of a 7.4 mT ESR doublet induced by gamma rays in amorphous-SiO2, NUCL INST B, 166, 2000, pp. 465-469
Citations number
14
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
ISSN journal
0168583X → ACNP
Volume
166
Year of publication
2000
Pages
465 - 469
Database
ISI
SICI code
0168-583X(200005)166:<465:GOA7ME>2.0.ZU;2-7
Abstract
Paramagnetic defects induced by gamma rays, in a dose range from 1 to 1000 Mrad, have been investigated by electron spin resonance (ESR) spectroscopy in various types of natural and synthetic silica, having different OH conte nt. A doublet with a field splitting of 7.4 mT, arising from the hyperfine interaction of an unpaired electron with a H nucleus associated with the H( I) center, was detected in all the investigated samples. This ESR structure exhibits a sublinear growth with the gamma dose linearly correlated with t he gamma-induced photoluminescence band at 4.4 eV. The intensity ratio of t hese two signals depends on the OI-I content of the sample. Our results agr ee with a model in which the H(I) center is generated by the reaction betwe en a two-fold coordinated Si and a hydrogen atom activated by the gamma-ind uced breaking of an OH bond. (C) 2000 Elsevier Science B.V. All rights rese rved.