Excitonic and electron-hole mechanisms of the creation of Frenkel defect in alkali halides

Citation
A. Lushchik et al., Excitonic and electron-hole mechanisms of the creation of Frenkel defect in alkali halides, NUCL INST B, 166, 2000, pp. 529-537
Citations number
38
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
ISSN journal
0168583X → ACNP
Volume
166
Year of publication
2000
Pages
529 - 537
Database
ISI
SICI code
0168-583X(200005)166:<529:EAEMOT>2.0.ZU;2-#
Abstract
Excitonic and electron-hole (e-h) mechanisms of stable F centre creation by VUV radiation in alkali halide crystals are discussed. In KCl at 4.2 K, th e efficiency of stable F-H pair creation is especially high at the direct o ptical formation of tripler excitons with n = 1. At 200 400 K, the creation processes of stable F centres in KCl are especially efficient at the forma tion of one-halide exciton in the Urbach tail of an exciton absorption. In KCl and KBr, the decay of a cation exciton (similar to 20 eV) causes the fo rmation of two e-h pairs, while in NaCl a cation exciton (33.5 eV) decays i nto two e-h and an anion exciton. An elastic uniaxial stress of a crystal e xcited by VUV radiation decreases the mean free path of excitons before the ir self-trapping (KI) and increases the mean free path of hot holes before self-trapping (NaCl). (C) 2000 Elsevier Science B.V. All rights reserved.