Photoluminescence from RE doped BGO waveguides

Samples of EGO doped with Er3+, Eu3+, Sm3+ and Nd3+ have been implanted at LNT (77 K) with Het ions for waveguide fabrication. The samples have been a nnealed at 250, 350, 400, 425 and 450 degrees C for 1 h in air. The defects caused by the implantation broaden the luminescence spectra of the RE ions within the waveguides. Increasing the anneal temperature narrows the lines , presumably by defect removal. The spectra resemble those of the bulk by a nneals at 450 degrees C. There is a correlation between the broadening and the size of the RE ion dopants. The differences between bulk and waveguide luminescence are most clearly observed for the Nd and Er ions. Reasons for this are discussed. (C) 2000 Elsevier Science B.V. All rights reserved.