Annealing behaviour of boron atoms implanted into polyethyleneterephtalate

Hundred keV B+ ions were implanted at high fluences into polyethylenetereph talate (PET, Mylar) and the boron depth distributions were measured by the neutron depth profiling technique (NDP). Subsequently the implanted samples were annealed isochronally to determine the diffusional, trapping and detr apping behaviour of the boron atoms. The boron depth profiles of as-implant ed samples differ significantly from those predicted by TRIM code. Pronounc ed inward and outward profile tails point at increased mobility and redistr ibution of boron atoms during the implantation. Thermal annealing to the te mperatures below 100 degrees C does not change the total boron content in t he 1 mu m thick surface layer and the boron depth profiles as well. For hig her annealing temperatures a significant redistribution of boron atoms is o bserved. (C) 2000 Elsevier Science B.V, All rights reserved.