The polyethylene (PE) films implanted with B+ and Ar- ions with fluences of
1 x 10(13)-1 x 10(17) cm(-2) and diffusive doped from aqueous solution of
FcCl(3) are studied. It was found that the subsequent FeCl3 diffusion influ
ences slightly the paramagnetic properties of the implanted polymer films t
hat evidence about weak chemical interaction of the dopants with the free r
adicals and radiation defects. The FeCl3 doping of the ion implanted PE res
ults in an increase of the surface layer conductivity and does not influenc
e the conductivity of the buried carbonaceous layer created by high fluence
implantation. The surface conductivity increase is caused probably by the
additional mechanisms of the charge carrier transport due to the interactio
n of the dopants with pi(-) and OH--radicals. The weak effect of the dopant
s on the electrical parameters of the buried carbonaceous layer is caused b
y the compensation of unsaturated bonds and free radicals in the layer. (C)
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