Multistage ion implantation of polyamide-6 films

Citation
Vn. Popok et al., Multistage ion implantation of polyamide-6 films, NUCL INST B, 166, 2000, pp. 660-663
Citations number
9
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
ISSN journal
0168583X → ACNP
Volume
166
Year of publication
2000
Pages
660 - 663
Database
ISI
SICI code
0168-583X(200005)166:<660:MIIOPF>2.0.ZU;2-V
Abstract
The radiation defect formation accompanied by the paramagnetic centre creat ion by multistage boron ion implantation into polyamide-6 (PA) films was st udied using the ESR technique. It was found that the multistage implantatio n with the energy increasing from step to step results in the rearrangement of the polymer layer being accompanied with the compensation of the termin ated carbon bonds and strong exchange interaction between pi-electrons. By contrast, a decrease of the ion energy from one implantation step to anothe r one bads to the progressive accumulation of the paramagnetic centres in t he implanted layers that permits to create highly conductive channels from the surface to the buried conducting carbonaceous layer produced in the pol ymer film via ion bombardment and to fabricate planar field-effect electron ic devices based on ion-implanted polymers. (C) 2000 Elsevier Science B.V. All rights reserved.