The radiation defect formation accompanied by the paramagnetic centre creat
ion by multistage boron ion implantation into polyamide-6 (PA) films was st
udied using the ESR technique. It was found that the multistage implantatio
n with the energy increasing from step to step results in the rearrangement
of the polymer layer being accompanied with the compensation of the termin
ated carbon bonds and strong exchange interaction between pi-electrons. By
contrast, a decrease of the ion energy from one implantation step to anothe
r one bads to the progressive accumulation of the paramagnetic centres in t
he implanted layers that permits to create highly conductive channels from
the surface to the buried conducting carbonaceous layer produced in the pol
ymer film via ion bombardment and to fabricate planar field-effect electron
ic devices based on ion-implanted polymers. (C) 2000 Elsevier Science B.V.
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