The influence of the implantation sequence on the (SiC)(1-x)(AlN)(x) formation

Authors
Pezoldt, J Rybin, PV Kulikov, DV Trushin, YV Yankov, RA Voelskow, M Kreissig, U
Citation
J. Pezoldt et al., The influence of the implantation sequence on the (SiC)(1-x)(AlN)(x) formation, NUCL INST B, 166, 2000, pp. 758-763
Citations number
27
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
ISSN journal
0168583X → ACNP
Volume
166
Year of publication
2000
Pages
758 - 763
Database
ISI
SICI code
0168-583X(200005)166:<758:TIOTIS>2.0.ZU;2-2
Abstract
The influence of the implantation sequence on the defect and implant distri bution during (SiC)(1-lambda)(AlN)(x) formation was studied by Rutherford b ackscattering spectrometry/ion channelling (RBS/C) and elastic recoil detec tion. It is shown that the implantation sequence aluminum followed by nitro gen lead to an improved crystallinity compared to the reverse implantation sequence for implantation temperatures above 300 degrees C, The results obt ained are discussed in relation to the defects distributions calculated by using a developed model which includes the effect of stress self-consistent ly. (C) 2000 Elsevier Science B.V, All rights reserved.