Broad-band active channels induced by electron beam lithography in LiF films for waveguiding devices

Citation
Rm. Montereali et al., Broad-band active channels induced by electron beam lithography in LiF films for waveguiding devices, NUCL INST B, 166, 2000, pp. 764-770
Citations number
16
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
ISSN journal
0168583X → ACNP
Volume
166
Year of publication
2000
Pages
764 - 770
Database
ISI
SICI code
0168-583X(200005)166:<764:BACIBE>2.0.ZU;2-S
Abstract
For the first time, a confocal light scanning microscope (CLSM) in fluoresc ence mode was used to reconstruct the depth distribution of efficiently emi tting laser-active color centers (CCs) in a stripe-like region induced by 1 2 keV electrons on lithium fluoride (LiF) films thermally evaporated on gla ss. The formation of the F-3(+) and F-2 aggregate defects appears restricte d to the electron penetration and proportional to their energy depth profil e, as obtained from a Monte Carlo simulation. (C) 2000 Published by Elsevie r Science B.V. All rights reserved.