Nanoclusters gold, silver and copper are produced in 6H-SiC by implanting 1
.0 MeV Au, 2.0 MeV Ag and 2.0 MeV Cu into the Si face of SiC at room or ele
vated temperature followed by annealing at various temperatures. The absorp
tion bands for each type of metal nanoclusters in SIC were determined using
optical absorption spectrophotometry, Elevated temperature implantation re
duces optical absorption due to ion implantation induced defects. Using the
Mie theory, we determined the index of refraction in the implanted volume.
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