On the basis of its thermal properties, TeO2 crystal was selected as an ins
ulator with low threshold electronic stopping power for track formation S-e
t. The crystals were irradiated by S, Zn, Mo, Kr, Te and Pb ions and the op
tical absorption and track formation were studied. Comparison is made with
the published results on LiNbO3, Y3Fe5O12 and SiO2 quartz. Good quantitativ
e agreement is found with the predictions of the thermal spike model of Sze
nes with respect to S-et and the variation of the track size with the elect
ronic stopping power S-e. Tt is shown that TeO2 has a high efficiency g at
low ion velocities, which is a characteristic feature of the damage cross-s
ection velocity effect. (C) 2000 Elsevier Science B.V. All rights reserved.