Rp. Wang et al., Predominant factors for quantum paraelectric-quantum ferroelectric transition in SrTiO3-based oxides, PHYSICA B, 284, 2000, pp. 1141-1142
We have tried to modify the low-temperature quantum paraelectric state of S
rTiO3 by small amount of A-site doping. Investigation of the dielectric pro
perties of D0.001Sr0.99TiO3 (D = Li, Ba, Ca, Mg, La, Y, Sm) polycrystalline
samples showed that isovalent and heterovalent substitutions have differen
t effects on the dielectric behavior. It is found that not only the atomic
radius of dopant D but also oxygen vacancies and A-site vacancies determine
the low-temperature states of the samples. (C) 2000 Elsevier Science B.V.
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