Optical characterization and transport behaviors of LPMOCVD-grown InSb epitaxial films

InSb films were grown on GaAs substrates by low-pressure metalorganic chemi cal vapor deposition (LPMOCVD). Far-infrared (FIR) reflectance spectroscopy and Raman scattering has been used to study the lattice vibration behavior of these samples and the effects of III-V source ratios on the films cryst alline quality to optimize the growth parameters. Lattice vibration modes w ere characterized. Film thickness, composition, stoichiometry and depth pro files were studied. The carrier concentration, mobility, effective mass as well as the dielectric behavior of these films are fitted by a model of die lectric response. (C) 2000 Elsevier Science B.V. All rights reserved.