The origin of fast valence fluctuations in SmB6

Authors
Sluchanko, NE Glushkov, VV Gorshunov, BP Demishev, SV Kondrin, MV Pronin, AA Volkov, AA Bruynseraede, Y Moshchalkov, VV Kunii, S
Citation
Ne. Sluchanko et al., The origin of fast valence fluctuations in SmB6, PHYSICA B, 284, 2000, pp. 1355-1356
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA B
ISSN journal
09214526 → ACNP
Volume
284
Year of publication
2000
Part
2
Pages
1355 - 1356
Database
ISI
SICI code
0921-4526(200007)284:<1355:TOOFVF>2.0.ZU;2-S
Abstract
Low-temperature transport has been studied in steady and pulsed magnetic fi eld on a single crystal of SmB6. Measurements in the range of intrinsic con duction allowed us to determine the indirect gap E-g approximate to 20 meV and microscopic parameters of carriers. The results obtained in the region of extrinsic conduction are discussed within the Kikoin-Mishchenko polaron- exciton model of charge fluctuations with short-range excitonic states E-ex approximate to 3.5 meV, R-ex approximate to 6 Angstrom. (C) 2000 Elsevier Science B.V. All rights reserved.