Effect of pressure on the Neel temperature and magnetoresistance of GdPt2Si2

Authors
Kagayama, T Oomi, G Sampathkumaran, EV
Citation
T. Kagayama et al., Effect of pressure on the Neel temperature and magnetoresistance of GdPt2Si2, PHYSICA B, 284, 2000, pp. 1505-1506
Citations number
3
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA B
ISSN journal
09214526 → ACNP
Volume
284
Year of publication
2000
Part
2
Pages
1505 - 1506
Database
ISI
SICI code
0921-4526(200007)284:<1505:EOPOTN>2.0.ZU;2-6
Abstract
The electrical resistance and magnetoresistance of GdPt2Si2 have been measu red under high pressure in order to examine the stability of antiferromagne tism at high pressures and high magnetic fields. The Neel temperature T-N a nd the metamagnetic transition field H-M were found to increase with increa sing pressure. These results will be discussed using thermodynamical relati ons. (C) 2000 Published by Elsevier Science B.V. All rights reserved.