Electron locking in layered structures

Citation
Fv. Kusmartsev et Hs. Dhillon, Electron locking in layered structures, PHYSICA B, 284, 2000, pp. 1780-1781
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA B
ISSN journal
09214526 → ACNP
Volume
284
Year of publication
2000
Part
2
Pages
1780 - 1781
Database
ISI
SICI code
0921-4526(200007)284:<1780:ELILS>2.0.ZU;2-W
Abstract
We describe a novel state of electrons and phonons arising in layered struc tures, like cuprates (HTSC) and semiconductor superlattices (SSL) due to el ectron-phonon interactions (which can be strongly enhanced by a strong magn etic field). These states are characterized by a localization of phonons an d a self-trapping[1-5] or locking of electrons in one or several quantum we lls (layers) due to an additional, deformational and/or polarizational pote ntial arising around these locking wells (layers). Using the tight-binding and adiabatic approximations the energy spectrum of such self-trapped slate s is found. (C) 2000 Elsevier Science B.V. All rights reserved.