The suppression of Coulomb oscillation in a normal-ferromagnet-normal metal single-electron transistor

Authors
Kim, J Oh, S Kim, JJ Lee, JO Park, JW Yoo, KH Kwon, HC
Citation
J. Kim et al., The suppression of Coulomb oscillation in a normal-ferromagnet-normal metal single-electron transistor, PHYSICA B, 284, 2000, pp. 1794-1795
Citations number
4
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA B
ISSN journal
09214526 → ACNP
Volume
284
Year of publication
2000
Part
2
Pages
1794 - 1795
Database
ISI
SICI code
0921-4526(200007)284:<1794:TSOCOI>2.0.ZU;2-8
Abstract
The electric transport properties of an Al/Al2O3/Ni/Al2O3/Al single-electro n transistor were studied. Compared to the all-normal-metal single-electron transistors, our sample showed enhanced tunnel current inside the Coulomb gap both in the superconducting and the normal state of the Al. The tunnel current showed sharp increase for the magnetic field H approximate to +/- 1 .57 T, which also was evidenced by the change of current-voltage (I-V) char acteristics with the magnetic field. (C) 2000 Elsevier Science B.V. All rig hts reserved.