Realistic and relevant models for the description of SET transistors

The principle of Coulomb charging effects in single electron tunneling (SET ) devices is well understood in terms of the 'orthodox theory'. However, kn own deviations arise due to dissipative heating effects, higher-order tunne ling or coupling to the electromagnetic environment. Those can be accounted for by more sophisticated theories, which are unfortunately rather unhandy and too general for the analysis of a realistic experiment. Based on exten sive DC measurements on metallic SET transistors, we are able to identify a ll significant deviations (in the weak tunneling limit) and to discuss the relevant theoretical models (i.e. 'horizon picture', self-heating) needed f or an appropriate description and an intuitive understanding of the experim ents. (C) 2000 Elsevier Science B.V. All rights reserved.