Mesoscopic electronic devices made by local oxidation of a Ti/Au bilayer film

Citation
M. Ahlskog et al., Mesoscopic electronic devices made by local oxidation of a Ti/Au bilayer film, PHYSICA B, 284, 2000, pp. 1838-1839
Citations number
3
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA B
ISSN journal
09214526 → ACNP
Volume
284
Year of publication
2000
Part
2
Pages
1838 - 1839
Database
ISI
SICI code
0921-4526(200007)284:<1838:MEDMBL>2.0.ZU;2-I
Abstract
The technique of field-induced local oxidation with the tip of an atomic fo rce microscope can be used to pattern non-noble metal thin films by creatin g insulating regions. We have studied the technique (oxide line width, oxid ation thickness, etc.) in order to fabricate mesoscopic electronic devices. Ti thin film structures have been patterned as well as more complicated st ructures where the Ti covers gold islands. (C) 2000 Elsevier Science B.V. A ll rights reserved.