Regimes of charge transport across semiconductor junctions

Authors
Sandow, B Gloos, K Rentzsch, R Ionov, AN
Citation
B. Sandow et al., Regimes of charge transport across semiconductor junctions, PHYSICA B, 284, 2000, pp. 1852-1853
Citations number
3
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA B
ISSN journal
09214526 → ACNP
Volume
284
Year of publication
2000
Part
2
Pages
1852 - 1853
Database
ISI
SICI code
0921-4526(200007)284:<1852:ROCTAS>2.0.ZU;2-H
Abstract
Charge transport across break junctions of n-doped Ge has been investigated . We have found several different regimes of transport. Although all juncti ons reflect the density of states of the samples, to extract the bulk densi ty of states only few junctions in a rather restricted range of parameters turned out to be useful. (C) 2000 Elsevier Science B.V. All rights reserved .