A new peak in the bend resistance of a four-terminal device written by FIBimplantation

Voltage-current (V-I) measurements performed on a focused ion beam, written four-terminal structure, show an anomalous behaviour in the ballistic tran sport regime, i.e. in the region of negative differential bend resistance t here appears an additional peak. The peak shifts to the higher current as t he electron density increases and the temperature dependence of the peak va nishes above 10 K. We explain this peak by the change in the ballistic elec tron trajectory resulting from the shift of the depletion zone around the i mplanted lines with the biasing voltage. (C) 2000 Elsevier Science B.V. All rights reserved.