Microelectronics on liquid helium

Microelectronic devices for surface state electrons on liquid helium are be ing developed using surface structures on quartz and GaAs substrates. Condu ction occurs along suspended helium films, held by surface tension in chann els, 1-2 mu m deep and 16-30 mu m wide. Low-frequency devices with source, drain and gate electrodes have been demonstrated. Preliminary measurements indicate that the electron mobility is similar to that on bulk helium. (C) 2000 Elsevier Science B.V. All rights reserved.