Quantum-size oscillations of the electric field effect (EFE) in thin Bi films

Citation
Av. Butenko et al., Quantum-size oscillations of the electric field effect (EFE) in thin Bi films, PHYSICA B, 284, 2000, pp. 1942-1943
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA B
ISSN journal
09214526 → ACNP
Volume
284
Year of publication
2000
Part
2
Pages
1942 - 1943
Database
ISI
SICI code
0921-4526(200007)284:<1942:QOOTEF>2.0.ZU;2-6
Abstract
The quantum-size state (QSS) of semimetal Bi films has been studied by elec tric field effect (EFE), namely, the change of the conductance at the elect rical charging of the him. The ratio of the electron and hole density of st ates g(n)/g(p) has been measured by EFE. The thickness dependence of this r atio exhibits a characteristic oscillation pattern, which is an unique labe l of QSS. This method allows a rather precise determination of the film thi ckness period of the oscillations. The result is in excellent agreement wit h the value derived from the dispersion law of bulk Bi. (C) 2000 Elsevier S cience B.V. All rights reserved.