Magnetoresistance and conductivity exponents of quench-condensed ultra-thin films of Bi

Citation
K. Das Gupta et al., Magnetoresistance and conductivity exponents of quench-condensed ultra-thin films of Bi, PHYSICA B, 284, 2000, pp. 1976-1977
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA B
ISSN journal
09214526 → ACNP
Volume
284
Year of publication
2000
Part
2
Pages
1976 - 1977
Database
ISI
SICI code
0921-4526(200007)284:<1976:MACEOQ>2.0.ZU;2-G
Abstract
We have studied the magnetoresistance (MR) and evolution of conductivity wi th thickness of quench-condensed Bismuth films on substrates of various die lectric constants. Our results indicate a negative intial MR proportional t o the square of the magnetic field. The conductance shows a power-law kind of dependence on thickness, with an exponent close to 1.33, characterisitic of a 2-D percolating system, only when the films are grown on a thin (simi lar to 10 Angstrom) Germanium underlayer but not otherwise. (C) 2000 Elsevi er Science B.V. All rights reserved.