The conduction mechanisms and effect of magnetic field for Ge-film thermome
ters in the 25 mK to 4.2 K temperature range and magnetic fields up to 6 T
are studied. At low temperatures, the variable-range hopping conductivity p
revails. At temperatures below 0.3 K, a gigantic negative magneto-resistanc
e (up to 100%) is observed. The temperature dependence of resistance and ma
gneto-resistance shows that localization behavior near the mobility edge ex
ists. To explain experimental results, we adopt a phenomenological model ba
sed on variable-range hopping below the mobility edge. We also use a scalin
g theory of localization with a localization length depending on the mobili
ty edge location. (C) 2000 Published by Elsevier Science B.V. All rights re
served.