Far-infrared absorption studies in MeV C+ and C-2(+) implanted InSb (111) crystals

In this work, we briefly report on far-infrared absorption (FIR) studies on MeV C+ and C-2(+) implanted InSb crystals in order to investigate the qual ity of the implanted layers and the basic difference in the C+ and C-2(+) i mplantations. It is found from the FIR data that, in C-2(+) implanted InSb samples, the transverse optical mode profile is broadened as compared to th e samples implanted with C+ at the same energy/atoms and at a constant flue nce. A detailed analysis shows that the conductivity in C-2(+) irradiated s pecimen is enhanced compared to the C+ implantation. The results are attrib uted to the tron-linear damage distribution due to C+ and the substitutiona l lattice site occupation of the implanted C atoms. (C) 2000 Elsevier Scien ce B.V. All rights reserved.