Parametric amplification with a high-Q LC resonator

Citation
J. Koivuniemi et M. Krusius, Parametric amplification with a high-Q LC resonator, PHYSICA B, 284, 2000, pp. 2147-2148
Citations number
1
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA B
ISSN journal
09214526 → ACNP
Volume
284
Year of publication
2000
Part
2
Pages
2147 - 2148
Database
ISI
SICI code
0921-4526(200007)284:<2147:PAWAHL>2.0.ZU;2-3
Abstract
Our measurements at 0.15-4.2 K and at frequencies below 1 MHz show that vol tage biased varactor diodes can be used for the tuning of high-Q LC resonat ors. GaAs diodes with a variable capacitance in the range 1-13 pF are found to be adequate for circuitry with a Q value in the regime (1-4) x 10(4) an d a noise level below 2 nV/root Hz. We use the voltage-controlled varactor capacitance to obtain parametric gain from the resonator. (C) 2000 Elsevier Science B.V. All rights reserved.