Noise temperature of cryogenic FET amplifier with high-Q resonator

Authors
Koivuniemi, J Krusius, M
Citation
J. Koivuniemi et M. Krusius, Noise temperature of cryogenic FET amplifier with high-Q resonator, PHYSICA B, 284, 2000, pp. 2149-2150
Citations number
1
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA B
ISSN journal
09214526 → ACNP
Volume
284
Year of publication
2000
Part
2
Pages
2149 - 2150
Database
ISI
SICI code
0921-4526(200007)284:<2149:NTOCFA>2.0.ZU;2-K
Abstract
The noise model of a liquid-helium temperature GaAs MESFET preamplifier is analyzed, by measuring its parameters to optimize signal-to-noise performan ce. The input circuit is a superconducting high-Q LC resonator, which is us ed for cw NMR detection at low magnetic fields, We discuss the Q value in t he temperature range 0.1-0.5 K, the coupling between resonator and amplifie r, and the different noise sources. (C) 2000 Elsevier Science B.V. All righ ts reserved.