The growth and thermal stability of Ti-silicides obtained by metal vapor vacuum arc ion source implantation

(100) and (111) oriented Si wafers were implanted with 45 keV, 5 x 10(17) c m(-2) Ti ions at various beam currents. X-ray diffraction (XRD) patterns sh ow that there are different initial silicides such as C49 TiSi2 and Ti5Si3 on various wafers. While annealing was carried out at higher temperatures, both C49 TiSi2 and Ti5Si3 transform into C54 TiSi2. However, it is noted th at C54 TiSi2 indicates different preferential orientations on two kinds of wafers. The change of sheet resistance with annealing temperature reflects that the disilicide is more stable than those obtained by solid phase react ion. It is also valuable to find that Ti atomic profiles show only small ch anges For various anneals.