Novel nitride devices based on polarization fields

A key property of the nitrides is the fact that they possess large spontane ous and piezoelectric polarization fields that allow a significant tailorin g of the carrier dynamics and optical properties of nitride devices. In thi s paper, based on first-principles calculations of structural and electroni c properties of bulk nitrides and their heterostructure. we investigate the potential of this novel material class for modern device applications by p erforming self-consistent Monte Carlo simulations. We demonstrate that the internal electric fields have a significant and favorable influence an the transistor characteristics.