Critical exponents at the superconductor-insulator transition in dirty-boson systems

Authors
Citation
If. Herbut, Critical exponents at the superconductor-insulator transition in dirty-boson systems, PHYS REV B, 61(21), 2000, pp. 14723-14726
Citations number
29
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
61
Issue
21
Year of publication
2000
Pages
14723 - 14726
Database
ISI
SICI code
0163-1829(20000601)61:21<14723:CEATST>2.0.ZU;2-Z
Abstract
I obtain the inverse of the correlation length exponent at the superfluid-B ose-glass quantum critical point as a series in a small parameter root d-1, with d being the dimensionality of the system, and compute the two lowest terms. For d=2, I find v(s)=0.81 and v(c)=1.03 for short-range and Coulomb interactions between bosons, respectively. When combined with the exact Val ues of the dynamical critical exponents, these results are in quantitative agreement with experiments on onset of superfluidity in He-4 in porous glas ses and on the superconductor-insulator transition in homogeneous metallic films.