Organic static induction transistor for display devices

Organic static induction transistors (SITs) for display devices are propose d and the basic electrical characteristics of the SITs are investigated. Th e organic SITs, using a copper phthalocyanine (CuPc) evaporated film as an active layer, have a layered structure of Au (drain)/CuPc/Al (gate)/CuPc/Au (source)/glass. The electrical characteristics show that the current flow from the source to drain electrodes is controlled by relatively low gate vo ltages. Furthermore, excellent characteristics such as a high current densi ty of approximately 4 mA/cm(2) and high-speed operation of less than 0.25 m s are realized by applying a buried Al grid electrode as the Schottky gate. (C) 2000 Elsevier Science S.A. All rights reserved.