V. Fattori et al., Light-emitting devices with a photoluminescent quinquethiophene derivativeas an emitting material, SYNTH METAL, 111, 2000, pp. 83-86
Electrical and electroluminescence measurements were carried out on single-
and double-layer light emitting devices where a functionalized quinquethio
phene, having a high photoluminescence quantum yield in its solid state (si
milar to 11%), was used as the emitting molecule. The thiophene derivative
was used together with N,N'-dipheny-N,N'-bis(3-metylphenyl)-1,1'-biphenyl-4
,4'-diamine (TPD), the well-studied hole injecting and transporting molecul
e, and with Alq(3) as the electron transporting and emitting material. The
deposition techniques for the device construction were both vacuum sublimat
ion of the pure compounds and spinning of the concentrated solutions of pur
e or mixed compounds. Electroluminescence spectra show that the thiophene d
erivative is the only emitting species when put together with TPD, both in
the single- and double-layer devices. Its orange emission is mixed with the
green Alq(3) emission in the double layer devices where a vacuum-deposited
Alq(3) layer is in contact with the cathode, the orange/green intensity ra
tio being dependent on the applied voltage. These light emitting devices ar
e characterized by an extremely low onset voltage (2 Volt) and a fairly goo
d electroluminescence external quantum efficiency (EQE = 0.7%). (C) 2000 El
sevier Science S.A. AU rights reserved.