Transient electroluminescence measurements on organic heterolayer light emitting diodes

Citation
Ag. Muckl et al., Transient electroluminescence measurements on organic heterolayer light emitting diodes, SYNTH METAL, 111, 2000, pp. 91-94
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SYNTHETIC METALS
ISSN journal
03796779 → ACNP
Volume
111
Year of publication
2000
Pages
91 - 94
Database
ISI
SICI code
0379-6779(20000601)111:<91:TEMOOH>2.0.ZU;2-I
Abstract
We have investigated the field dependence of the electron and hole drift mo bility in tris-(8-hydroxyquinoline) aluminium (Alq(3)) in organic multi lay er light emitting diodes (LEDs) using transient electroluminescence measure ments. The electron transport in thin films of Alq(3) can be understood in terms of hopping processes. We obtain a full set of parameters for a modifi ed Poob-Frenkel equation describing the temperature and field dependence of the electron drift mobility. For the measurement of the hole drift mobilit y, a special device structure was designed. We were able to determine the h ole drift mobility in Alq(3) and found good agreement with the data obtaine d from previous time-of-flight (TOF) measurements. (C) 2000 Elsevier Scienc e S.A. All rights reserved.