Poly(p phenylene vinylene)/porous silicon light emitting diodes

Citation
Tp. Nguyen et al., Poly(p phenylene vinylene)/porous silicon light emitting diodes, SYNTH METAL, 111, 2000, pp. 199-202
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SYNTHETIC METALS
ISSN journal
03796779 → ACNP
Volume
111
Year of publication
2000
Pages
199 - 202
Database
ISI
SICI code
0379-6779(20000601)111:<199:PPVSLE>2.0.ZU;2-R
Abstract
Optical properties of composite films formed by mixing poly (p phenylene vi nylene) and porous silicon (PPV/PS) with various concentrations were invest igated by Raman, infrared (IR) and photoluminescence (PL) spectroscopy. Ana lysis of the Raman and IR spectra showed that PS was incorporated to the po lymer matrix without effecting its properties. Modifications of the PL spec tra were explained by the presence of oxygen from the PS grains. Light emit ting diodes (LEDs) using the composite as an emitter exhibited low turn-on voltage as compared to PPV based devices. (C) 2000 Elsevier Science S.A. Al l rights reserved.