The growth mechanism of black spots in polymer EL device

Citation
Sh. Kim et al., The growth mechanism of black spots in polymer EL device, SYNTH METAL, 111, 2000, pp. 253-256
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SYNTHETIC METALS
ISSN journal
03796779 → ACNP
Volume
111
Year of publication
2000
Pages
253 - 256
Database
ISI
SICI code
0379-6779(20000601)111:<253:TGMOBS>2.0.ZU;2-J
Abstract
Polymer EL devices with poly(2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylenev inylene) (MEH-PPV) single layer were fabricated and current (I)-voltage (V) -EL and modified I-V experiments were performed. The turn on voltage for th e detectable optical power was obtained as 2.5 V. EL image was observed and recorded by using CCD camera and black spot growth was observed in the tim e domain. The origin of the black spot formation and growth are local elect rical breakdown and electric sparks at the edge of the black spot. By analo gy from the modified I-V measurements, conducting path formation leading to the destruction of the path process could be confirmed. We processed a sim ple phenomenological model to describe the black spot growth and confirmed good agreements with the experiment. (C) 2000 Published by Elsevier Science S.A. All rights reserved.