Transient behaviour of charge carriers in multilayer organic light-emitting diodes: experiment and theory

Citation
K. Book et al., Transient behaviour of charge carriers in multilayer organic light-emitting diodes: experiment and theory, SYNTH METAL, 111, 2000, pp. 263-267
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SYNTHETIC METALS
ISSN journal
03796779 → ACNP
Volume
111
Year of publication
2000
Pages
263 - 267
Database
ISI
SICI code
0379-6779(20000601)111:<263:TBOCCI>2.0.ZU;2-K
Abstract
We have investigated multilayer organic light-emitting diodes (OLEDs) with a tris(8-hydroxy-quinolinolato)aluminium (Alq(3)) emitting layer under both cw and pulsed operation. We detected optically the positive charge carrier s in the hole transport layer (HTL) consisting of 1,3,5-tris-(N, N-bis-(4,5 -methoxy-phenyl)-aminophenyl)-benzene (TAPB) as a function of the applied b ias. It is seen that the positive contact shows ohmic behaviour. Furthermor e, transient electroluminescence (EL) measurements demonstrate a dependence of rise times on applied bias and the device history, which we attribute t o the formation of a positive surface charge at the HTL/electron transport layer (ETL) interface. An analytical model is developed which successfully describes these observed transients and predicts the corresponding carrier concentrations quantitatively. (C) 2000 Elsevier Science S.A. All rights re served.