Citation
P. Stallinga et al., Electronic levels in MEH-PPV, SYNTH METAL, 111, 2000, pp. 535-537
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SYNTHETIC METALS
ISSN journal
03796779
→ ACNP
Volume
111
Year of publication
2000
Pages
535 - 537
Database
ISI
SICI code
0379-6779(20000601)111:<535:ELIM>2.0.ZU;2-E
Abstract
pn-Junctions of MEH-PPV on top of heavily doped n-type silicon were used in
electrical measurements. Through deep-level transient-spectroscopy (DLTS)-
like measurements, four traps (two majority and two minority traps) could b
e identified on top of the shallow acceptor level responsible for conductio
n. Furthermore, evidence is found for interface states. (C) 2000 Published
by Elsevier Science S.A. All rights reserved.