On mechanisms of defect formation in aluminum crystals bombarded by low-energy heavy ions

Citation
Gv. Kornich et al., On mechanisms of defect formation in aluminum crystals bombarded by low-energy heavy ions, TECH PHYS L, 26(6), 2000, pp. 455-457
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
TECHNICAL PHYSICS LETTERS
ISSN journal
10637850 → ACNP
Volume
26
Issue
6
Year of publication
2000
Pages
455 - 457
Database
ISI
SICI code
1063-7850(2000)26:6<455:OMODFI>2.0.ZU;2-Z
Abstract
The mechanisms of formation of vacancies and radiation-induced adsorbed and interstitial atoms in the cascades of atomic collisions induced by 25-, 40 - and 50-eV Ar and Xe ions normally incident onto the Al(100) surface at 30 0 K are discussed within the framework of the molecular dynamics approach. The numbers of bulk and surface vacancies formed in the course of a collisi on cascade exhibit two maxima in the case of Xe ions and a single maximum i n the case of Ar ions. (C) 2000 MAIK "Nauka/Interperiodica".